News and Achievements

Dr. Shuyuan Shi
Institute of Microelectronics Prize (June 2020)

Congratulations! Dr. Shuyuan Shi has been awarded the "Institute of Microelectronics Prize" for being the student with the best PhD project in the area of Microelectronic Technologies and Devices.

Prof. Hyunsoo Yang
NRF Investigatorship Award 2020 (April 2020)

The National Research Foundation (NRF) Investigatorship is a distinguished research grant that supports a small number of scientists who have a track record of scientific achievements that identify them as leaders in their respective field of research. It provides an opportunity for established, mid-career researchers to pursue ground-breaking, high-risk research.

Professor Yang Hyunsoo is one of the two winners of this year’s NRF Investigatorship.

Dr. Yi Wang
Science Paper was Highlighted in Physics Today (January 2020)

Dr. Kaiming Cai 
Nature Electronics Paper was Highlighted in News and Views (January 2020)

In the paper published in the journal Nature Electronics, we demonstrated an ultrafast and energy-efficient spin-orbit torque switching in compensated ferrimagnets. Using a pump-probe technique to perform time-resolved measurements, we show that the switching time can be easily reduced to the subnanosecond regime and a domain wall velocity of 5.7 km/s can be achieved. The switching energy efficiency in the ferrimagnets is one to two orders of magnitude higher than that of ferromagnets. This work was further highlighted in the News & Views.

Prof. Hyunsoo Yang
2019 IEEE Magnetics Society Distinguished Lecturer (2019)

Presentation Title:

Spin-Orbit Technologies: From Magnetic Memory to Terahertz Generation

Dr. Shuyuan Shi
Best Student Presentation Award at the 2019 MMM Conference (November 2019)

Graduate student Shuyuan Shi of Professor Hyunsoo Yang’s research group was recently awarded the Best Student Presentation Award at the 2019 MMM Conference in Las Vegas. The conference includes a wide range of topic on recent developments in fundamental and applied magnetism and has attracted more than 1800 conference registrants. This award recognizes and encourages excellence in graduate studies in the field of magnetism. Five finalists were selected from the student presenters to compete for the award, from which, Shuyuan’s work on “Efficient Magnetization Switching and Dzyaloshinskii-Moriya Interaction in WTe2/ferromagnet Heterostructures” was chosen for the Best Student Presentation Award.

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Dr. Pan He
Nonlinear Planar Hall Effect Research was Highlighted in Nature Reviews Materials (July 2019)

An intriguing property of a three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new type of Hall effect in a 3D TI Bi2Se3 film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a π/2 angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of π/4 between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time-reversal symmetry breaking, which also exists in a wide class of noncentrosymmetric materials with a large span of magnitude. It provides a new way to characterize and utilize the nonlinear spin-to-charge conversion in a variety of topological quantum materials.

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  • Pan He, Steven S. -L. Zhang, Dapeng Zhu, Shuyuan Shi, Olle G. Heinonen, Giovanni Vignale, and Hyunsoo Yang,
    Nonlinear planar Hall effect, Phys. Rev. Lett. 123, 016801 (2019)
  • Research Highlight in Nature Reviews Materials: 
    Giulia Pacchioni The Hall effect goes nonlinear Nat. Rev. Mater. 4, 514 (2019)
Dr. Kaiming Cai 
ICMAT 2019 Award (June 2019)

In this work, we demonstrate field-free spin-orbit torque (SOT) switching by exploiting the domain wall motion in an anti-notched microwire with perpendicular magnetic anisotropy. The combination of SOT, Dzyaloshinskii-Moriya interaction, and domain wall surface tension induced geometrical pinning allows a deterministic control of the domain wall for achieving a field-free switching. The field-free switching scheme can be readily incorporated into a three-terminal magnetic memory with lower power consumption. This work was published in Nano Letters and presented in ICMAT 2019, which was awarded as the Best Poster Award.

Jong Min Lee, Kaiming Cai, Guang Yang, Yang Liu, Rajagopalan Ramaswamy, Pan He, and Hyunsoo Yang
Field-Free Spin–Orbit Torque Switching from Geometrical Domain-Wall Pinning, Nano Lett., 18, 4669 (2018)